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www.irf.com 1 11/18/10 irf9362pbf hexfet power mosfet notes through are on page 2
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! so-8 features and benefits features resulting benefits industry-standard so-8 packa g e multi-vendor compatibility rohs compliant containin g no lead, no bromide and no halo g en environmentally friendlier results in ? note form quantit y irf9362pbf so8 tube/bulk 95 irf9362trpbf so8 ta p e and reel 4000 orderable part number package type standard pac k absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ -10v i d @ t a = 70c continuous drain current, v gs @ -10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v a w c max. -8.0 -6.4 -64 20 -30 -55 to + 150 2.0 0.016 1.3 v ds -30 v r ds(on) max (@v gs = -10v) 21.0 m ? r ds(on) max (@v gs = -4.5v) 32.0 m ? q g (typical) 13 nc i d (@t a = 25c) -8.0 a
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2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 4.6mh, r g = 25 ? , i as = -6.4a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at t j of approximately 90c. for design aid only, not subject to production testing. g d s static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage -30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.021 ??? v/c r ds(on) ??? 17.0 21.0 ??? 25.7 32.0 v gs(th) gate threshold voltage -1.3 -1.8 -2.4 v v ds = v gs , i d = -25a ? v gs(th) gate threshold voltage coefficient ??? -5.8 ??? mv/c i dss drain-to-source leakage current ??? ??? -1.0 ??? ??? -150 i gss gate-to-source forward leakage ??? ??? -100 gate-to-source reverse leakage ??? ??? 100 gfs forward transconductance 12 ??? ??? s q g total gate charge ???13???nc v ds = -15v, v gs = -4.5v, i d = - 6.4a q g total gate charge ??? 26 39 q gs gate-to-source charge ??? 3.8 ??? q gd gate-to-drain charge ??? 6.3 ??? r g gate resistance ???17??? ? t d(on) turn-on delay time ??? 5.2 ??? t r rise time ??? 5.9 ??? t d(off) turn-off delay time ??? 115 ??? t f fall time ???53??? c iss input capacitance ??? 1300 ??? c oss output capacitance ??? 250 ??? c rss reverse transfer capacitance ??? 170 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 32 48 ns q rr reverse recovery charge ??? 20 30 nc thermal resistance parameter units r jl junction-to-drain lead r ja junction-to-ambient conditions see figs. 19a & 19b max. 94 -6.4 ? = 1.0khz v gs = 0v v ds = -25v v ds = -24v, v gs = 0v conditions v gs = 0v, i d = -250a reference to 25c, i d = -1ma v gs = -10v, i d = -8.0a v gs = -4.5v, i d = -6.4a m ? a t j = 25c, i f = -2.0a, v dd = -24v di/dt = 100/s t j = 25c, i s = -2.0a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol i d = -6.4a r g = 6.0 ? v ds = -10v, i d = -6.4a v ds = -24v, v gs = 0v, t j = 125c v dd = -30v, v gs = -10v i d = -1.0a v ds = -15v v gs = -20v v gs = 20v v gs = -10v ns pf ??? typ. ??? static drain-to-source on-resistance a ??? ??? ??? ??? -2.0 -64 na nc c/w max. 20 62.5 typ. ??? ???
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -4.5v -3.7v -3.5v -3.3v -3.0v -2.7v bottom -2.5v 60s pulse width tj = 25c -2.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -2.5v 60s pulse width tj = 150c vgs top -10v -4.5v -3.7v -3.5v -3.3v -3.0v -2.7v bottom -2.5v 1 2 3 4 5 6 -v gs , gate-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -15v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -8.0a v gs = -10v 0 10203040 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -24v v ds = -15v v ds = -6.0v i d = -6.4a 1 10 100 -v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 khz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss
4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 8. maximum safe operating area fig 9. maximum drain current vs. ambient temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.3 0.5 0.7 0.9 1.1 1.3 -v sd , source-to-drain voltage (v) 1.0 10 100 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec dc 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 - i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = -25a
www.irf.com 5 fig 14. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 13. typical on-resistance vs. drain current fig 15 typical power vs. time "

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period " "

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fig 16. #$#$%& for p-channel hexfet power mosfets 2 4 6 8 10 12 14 16 18 20 -v gs, gate -to -source voltage (v) 0 10 20 30 40 50 60 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = -8.0a t j = 25c t j = 125c 0 10 20 30 40 50 60 70 -i d , drain current (a) 0 10 20 30 40 50 60 70 80 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = -4.5v vgs = -10v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -1.8a -2.6a bottom -6.4a 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 time (sec) 0 200 400 600 800 1000 s i n g l e p u l s e p o w e r ( w )
6 www.irf.com fig 17a. gate charge test circuit fig 17b. gate charge waveform fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit fig 19b. switching time waveforms fig 19a. switching time test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k s r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v &' 1 ( #
0.1 % + - t p v ( br ) dss i as v ds 90% 10% v gs t d(on) t r t d(off) t f
www.irf.com 7 note: for the most current drawing please refer to ir website at http://www .irf.com/package/

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$%$ ! ! ! $$ & ! dimensions are shown in milimeters (inches) so-8 part marking information

8 www.irf.com qualification standards can be found at international rectifier?s web site http://www .irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/2010 data and specifications subject to change without notice. 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel (dimensions are shown in milimeters (inches)) msl1 (per jedec j-std-020d ??? ) rohs compliant qualification information ? qualification level consumer ?? (per jedec jesd47f ??? guidelines) yes moisture sensitivity level so-8

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